What is the primary function of a silicon carbide furnace tube?
Release time:
2022-06-12
Silicon carbide furnace tube Also known as refractory furnace tubes, these products boast numerous superior properties, including high strength, high hardness, excellent wear resistance, high-temperature resistance, corrosion resistance, good thermal shock resistance, high thermal conductivity, and excellent oxidation resistance. They are widely used in industries such as medium-frequency forging, metallurgical sintering furnaces, various heat treatment electric furnaces, medium-frequency heating forging furnaces, metallurgy, chemical engineering, and nonferrous metal smelting.
Silicon carbide furnace tubes are widely used in kilns and other applications. While the exterior of the furnace tube is heated, the interior still maintains the required working environment.

Furnace tubes made from water-absorbing materials can be used as supporting components for kilns, cable conduits, temperature-measuring devices, or burner ports in gas and oil-fired kilns.
Our Silicon carbide furnace tube Widely used in high-temperature environments such as kilns, as well as in laboratory analytical furnaces from manufacturers like Carbolite, Rico, and Lindberg. The commonly used materials for these furnace tubes are dense mullite (EM60) or alumina (EA998).
We can custom-manufacture various silicon carbide furnace tubes and solid rods according to customer-specified dimensions and tolerances. We employ specialized manufacturing processes to produce silicon carbide furnace tubes with exceptionally high precision. All of our conventional silicon carbide furnace tubes can be equipped with flanges, drilled, and grooved as required.
Catheter
One end of the conduit is typically equipped with a flange. It is commonly used to introduce burners or thermocouples into furnaces.
These pipes are custom-made to meet different requirements. We can supply flanged pipes in a variety of standard sizes.
Conventional furnace tube
Traditionally, furnace tubes are circular in shape, but they can also be made into other forms. We offer elliptical, square, rectangular, hexagonal, and various types of tubes with grooved outer surfaces.
Silicon carbide furnace tube This is a high-quality silicon carbide product made primarily from silicon carbide and produced through high-temperature sintering. It boasts numerous advantages, including high temperature resistance, corrosion resistance, rapid thermal conductivity, high strength, high hardness, excellent wear resistance, good thermal shock resistance, a high thermal conductivity coefficient, and superior oxidation resistance. Both ends are fitted with specialized high-temperature-resistant insulating sleeves, which effectively prevent corrosion of the heating elements (including silicon carbide rods and electric furnace wires). Its performance metrics surpass those of various graphite products. It exhibits excellent oxidation resistance, thermal shock resistance, high-temperature and wear resistance, good chemical stability, resistance to strong acids, and no reaction with strong acids or strong bases.
Silicon Carbide Furnace Tube Production Process: The finished product is made from silicon carbide as the primary raw material and is produced through a special high-temperature firing process, resulting in a high-quality silicon carbide product. Standard lengths can be customized according to the customer’s specific requirements. Main applications of silicon carbide furnace tubes include: extensive use in non-ferrous metal refining, degassing systems for aluminum products, textile dyeing machinery, zinc-aluminum refining, and finished-product processing.
The industrial development of silicon carbide
Silicon carbide boasts characteristics such as high input impedance, low noise, and excellent linearity. It is one of the rapidly developing silicon-carbide components that has been among the first to achieve commercialization. Compared with MOSFETs, silicon-carbide devices do not suffer from reliability issues caused by gate oxide defects nor are they constrained by low carrier mobility. Their unipolar operating characteristics ensure outstanding high-frequency performance. Moreover, the silicon-carbide junction structure exhibits superior stability and reliability at high temperatures; consequently, its threshold voltage is typically negative, making it a normally-on device—a characteristic highly unfavorable for power electronic applications and incompatible with today's commonly used devices. To address this challenge, a purpose-driven circuit approach was adopted, introducing trench injection device technology to develop normally-off enhanced-mode devices. However, enhanced-mode devices often come at the cost of slightly degraded forward on-state resistance characteristics. Therefore, normally-on (depletion-mode) devices are easier to implement for achieving higher power density and current capacity, while depletion-mode devices can attain an always-off operating state through cascading. The cascading method involves connecting low-voltage silicon-based MOSFETs in series. Naturally, the cascaded drive circuit is fully compatible with conventional silicon-based device drive circuits. This cascaded architecture is ideally suited for replacing traditional silicon devices in high-voltage, high-power applications, directly sidestepping any compatibility issues with existing drive circuits.
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